摘要 :
TiO2 thin film has attracted considerable attention in recent years, due to its different refractive index and transparency with amorphous and different crystals in the visible and near-infrared wavelength region, high dielectric ...
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TiO2 thin film has attracted considerable attention in recent years, due to its different refractive index and transparency with amorphous and different crystals in the visible and near-infrared wavelength region, high dielectric constant, wide band gap, high wear resistance and stability, etc, for which make it being used in many fields. This paper aims to investigate the optical characterization of thin film TiO2 on silicon wafer. The TiO2 thin films were prepared by DC reactive magnetron sputtering process from Ti target. The reflectivity of the films was measured by UV-3101PC, and the index of refraction (n) and extinction coefficient (k) were measured by n & k Analyzer 1200.
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摘要 :
Cu films with thickness of about 500nm were deposited on glass substrates without heat-ing by DC magnetron sputtering in pure Ar gas of 1.0Pa. The sputtering powers weremaintained at 390V× 0.27A, 430V× 0. 70A and 450V× 1.04A, a...
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Cu films with thickness of about 500nm were deposited on glass substrates without heat-ing by DC magnetron sputtering in pure Ar gas of 1.0Pa. The sputtering powers weremaintained at 390V× 0.27A, 430V× 0. 70A and 450V× 1.04A, and the correspondingdeposition rates of Cu film reached 35nm/min, 104nm/min and 167nm/min. X-raydiffraction, scanning electron microscopy and atomic force microscopy were used toobserve the structural characteristics of the films. The resistance of the films was mea-sured using four-point probe technique. The amount of larger grains increases and theresistivity of the films decreases evidently with an increase in sputtering power. It isconsidered that the increase in deposition rate with sputtering power mainly weakensthe influence of residual gas atoms on the growing film, and increases substrate andgas temperatures, resulting in the increase in grain size and the decrease in resistivityof the Cu film.
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Interlayer exchange coupling was first observed in Fe/Cr/Fe(001) sandwiches and Gd/Y multilayer films. In Gd/Y, the interlayer exchange is an oscillatory function of the Y thickness. Now strong interlayer exchange effects have bee...
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Interlayer exchange coupling was first observed in Fe/Cr/Fe(001) sandwiches and Gd/Y multilayer films. In Gd/Y, the interlayer exchange is an oscillatory function of the Y thickness. Now strong interlayer exchange effects have been found in many multilayered structures based on ferromagnetic transition metals such as Fe/Cu, Ag/Ni and Fe/Au multilayer films. The multilayer films based on Fe-N alloy attracted
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摘要 :
Several nc-TiN/a-TiB2 thin films comprised of nanocrystalline (nc-) TiN and amorphous (a-) TiB2phases were deposited on Si(100)at room temperature by reactive unbalanced dc magnetron sputtering, followed by vacuum annealed at 400,...
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Several nc-TiN/a-TiB2 thin films comprised of nanocrystalline (nc-) TiN and amorphous (a-) TiB2phases were deposited on Si(100)at room temperature by reactive unbalanced dc magnetron sputtering, followed by vacuum annealed at 400, 600, 800 and 1000℃ for 1h, respectively. Effects of B content on microstructure, mechanical behaviors and thermal microstructure stability have been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and nanoindentation measurements. The results indicated that B addition greatly affected both microstructure and mechanieal behavior of nc-TiN/a-TiB2 thin films. With increasing B content the grain size decreased. A maximum hardness value of about 33GPa was obtained at B content of about 19at. %. The improved mechanical properties of nc-TiN/a-TiB2films with the addition of B into TiN were attributed to their densified microstructure with development of fine grain size. Only addition of sufficient B could restrain grain growth during annealing. High B content resulted in high microstructure stability. The crystallization of amorphous matrix occurred at about 800℃, forming TiB or TiB2 crystallite, depending on B content. Before that no change in bonding configuration was found.
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摘要 :
Copper nitride thin film was deposited on glass substrates by reactive DC (direct current) magnetron sputtering at a 0.5 Pa N2 partial pressure and different substrate temperatures. The as-prepared film, characterized with X-Ray d...
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Copper nitride thin film was deposited on glass substrates by reactive DC (direct current) magnetron sputtering at a 0.5 Pa N2 partial pressure and different substrate temperatures. The as-prepared film, characterized with X-Ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy measurements, showed a composed structure of Cu3N crystallites with anti-ReO3 structure and a slight oxidation of the resulted film.The crystal structure and growth rate of Cu3N films were affected strongly by substrate temperature. The preferred crystalline orientation of Cu3N films were (111) and (200) at RT, 100℃. These peaks decayed at 200℃ and 300℃ only Cu (111) peak was noticed. Growth of Cu3N films at 100℃ is the optimum substrate temperature for producing high-quality (111) Cu3N films. The deposition rate of Cu3N films estimated to be in range of 18-30 nm/min increased while the resistivity and the microhardness of Cu3N films decreased when the temperature of glass substrate increased.
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摘要 :
TiO2 thin films were prepared by DC magnetron sputtering with the oxygen flow rate higher than the threshold. The film deposited for 5 h was of anatase phase with a preferred orientation along the <220> direction, but the films deposit...
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TiO2 thin films were prepared by DC magnetron sputtering with the oxygen flow rate higher than the threshold. The film deposited for 5 h was of anatase phase with a preferred orientation along the <220> direction, but the films deposited for 2 and 3 h were amorphous. The transmittance and photocatalytic activity of the TiO2 films increased constantly with increasing film thickness. When the annealing temperature was lower than 700℃, only anatase grew in the TiO2 film. TiO2 phase changed from anatase to rutile when the annealing temperature was above 800℃. The photocatalytic activity decreased with increasing annealing temperature.
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摘要 :
Some fundamental studies on the preparation, structure and optical properties of NbN films were carried out. NbN thin films were deposited by DC reactive magnetron sputtering at different N2 partial pressures and different substra...
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Some fundamental studies on the preparation, structure and optical properties of NbN films were carried out. NbN thin films were deposited by DC reactive magnetron sputtering at different N2 partial pressures and different substrate temperatures ranging from -50 ℃to 600 ℃. X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM) were employed to characterize their phase components, microstructures, grain sizes and surface morphology. Optical properties inclusive of refractive indexes, extinction coefficients and transmittance of the NbN films under different sputtering conditions were measured. With the increase in the N2 partial pressure,δ-NbN phase structure gets forming and the grain size and lattice constant of the cubic NbN increasing. The deposited NbN film has relatively high values of refractive index and extinction coefficient in the wavelength ranging from 240 nm to 830 nm. Substrate temperature exerts notable influences on the microstructure and optical transmittance of the NbN films. The grain sizes of the δ-NbN film remarkably increase with the rise of the substrate temperature, while the transmittance of the films with the same thickness decreases.Ultra-fine granular film with particle size of several nanometers forms when the substrate is cooled to -50 ℃, and a remarkable augmentation of transmittance could be noticed under so low a temperature.
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摘要 :
Silicon dioxide (SiO2) films were prepared on sapphire (α-Al2O3) by radio frequency magnetron reactive sputtering in order to in crease both transmission and rain erosion resistant performance of infrared domes of sapphire. Compo...
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Silicon dioxide (SiO2) films were prepared on sapphire (α-Al2O3) by radio frequency magnetron reactive sputtering in order to in crease both transmission and rain erosion resistant performance of infrared domes of sapphire. Composition and structure of SiO2 films were analyzed by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD),respectively. The transmittance of uncoated and coated sapphire was measured using a Fourier transform infrared(FTIR) spectrometer. Rain erosion tests of the uncoated and coated sapphire were performed at 211 m/s impact velocity with an exposure time ranging from 1 to 8 min on a whirling arm rig. Results show that the deposited films can greatly increase the transmission of sapphire in mid-wave IR. After rain erosion test, decreases in normalized transmission were less than 1% for designed SiO2 films and the SiO2 coating was strongly bonded to the sapphire substrate. In addition, sapphires coated with SiO2 films had a higher transmittance than uncoated ones after rain erosion.
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摘要 :
Cu films with thickness of 630-1300nm were deposited on glass substrates withoutheating by DC magnetron sputtering in pure Ar gas. Ar pressure was controlled to0.5, 1.0 and 1.5Pa respectively. The target voltage was fixed at 500V ...
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Cu films with thickness of 630-1300nm were deposited on glass substrates withoutheating by DC magnetron sputtering in pure Ar gas. Ar pressure was controlled to0.5, 1.0 and 1.5Pa respectively. The target voltage was fixed at 500V but the targetcurrent increased from 200 to 1150mA with Ar pressure increasing. X-ray diffrac-tion, scanning electron microscopy and atomic force microscopy were used to observethe structural characterization of the films. The resistivity of the films was measuredusing four-point probe technique. At all the Ar pressures, the Cu films have mixturecrystalline orientations of [111], [200] and [220] in the direction of the film growth.The film deposited at lower pressure shows more [111] orientation while that depositedat higher pressure has more [220] orientation. The amount of larger grains in the filmprepared at 0.5Pa Ar pressure is slightly less than that prepared at 1. 0Pa and 1.5PaAr pressures. The resistivities of the films prepared at three different Ar pressures rep-resent few differences, about 3-4 times of that of bulk material. Besides the depositionrate increases with Ar pressure because of the increase in target current. The contri-bution of the bombardment of energetic reflected Argon atoms to these phenomena isdiscussed.
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