摘要 : Cu films with thickness of about 500nm were deposited on glass substrates without heat-ing by DC magnetron sputtering in pure Ar gas of 1.0Pa. The sputtering powers weremaintained at 390V× 0.27A, 430V× 0. 70A and 450V× 1.04A, and ... 展开
作者 | F.P. Wang P. Wu L.Q. Pan Y. Tian H. Qiu |
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作者单位 | |
英文名称 | THE EFFECTS OF SPUTTERING POWER ON STRUCTURE AND ELECTRICAL PROPERTIES OF Cu FILMS |
期刊名称 | 《金属学报(英文版)》 |
期刊英文名称 | 《Acta Metallurgica Sinica》 |
页码/总页数 | 215-220 / 6 |
语种/中图分类号 | 汉语 / TG1 |
关键词 | Cu film DC magnetron sputtering sputtering power structure resistivity |
基金项目 | The authors wish to thank the National Natural Science Foundation of China for thefinancial support (Grant No.19974005). |
收录情况 | CSCD CSTPCD |
机标主题词 / 分类号 | 纳米 / TB921 |