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    摘要 : This study was designed to evaluate laser-sintered early-loaded 1-piece implants (OPI) based on clinical and radiographic findings. Thirty OPI were placed in the mandibular premolar area and subjected to early loading after 3 week... 展开

    摘要 : Background There is societal concern regarding potential health problems associated with breast implants. Much of this distrust climate was a reaction to the Poly Implant Prosthesis (PIP) scandal. Studying the mechanisms of implan... 展开

    摘要 : Objectives: To evaluate the two-year survival rate (SR) and marginal bone loss (MBL) of fixed dental prostheses (FDPs) supported by straight (S) and tilted (T) implants under the influence of diverse study variables.

    摘要 : The identification of metal ions and particles in the vicinity of failed implants has raised the concern that biomedical titanium alloys undergo corrosion in healthy and infected tissues. Various surface modifications and coatings... 展开

    摘要 : Objectives To evaluate prospectively the clinical and radiographic outcomes after ten years of short (6 mm) implants with a moderately rough surface supporting single crowns in the posterior region. Material and Methods Forty 6 mm... 展开

    摘要 : Abstract Objective Resonance frequency analysis (RFA) provides an evaluation of implant stability over time. This analysis is a non-invasive, precise, and objective method. Several studies compare the RFA system with other devices... 展开

    摘要 : ? 2023 British Association of Plastic, Reconstructive and Aesthetic SurgeonsIntroduction: Breast augmentation remains one of the most prevalent procedures in plastic surgery. While most patients experience high satisfaction with t... 展开

    [期刊]   EVAN M. HANDY   MULPURI V.RAO   O.W.HOLLAND   《Journal of Electronic Materials》    2000年29卷11期      共6页
    摘要 : A series of single energy Al,B,and Ga ion implants were performedin the energy range 50 keV to 4MeV into 6H-SiC to characterize theimplant depth profiles using secondary ion mass spectrometry(SIMS).From the implant depth profiles ... 展开
    关键词 : SiC   ion implantation   (Al   B   Ga implants)  

    [机翻] SiC的Al、B、Ga掺杂
    [期刊]   EVAN M. HANDY   MULPURI V.RAO   O.W.HOLLAND   《Journal of Electronic Materials》    2000年29卷11期      共6页
    摘要 : A series of single energy Al,B,and Ga ion implants were performed in the energy range 50 keV to 4MeV into 6H-SiC to characterize the implant depth profiles using secondary ion mass spectrometry(SIMS). From the implant depth profil... 展开
    关键词 : SiC   ion implantation   (Al   B   Ga implants)  

    [期刊]   Triplett RG   Frohberg U   Sykaras N   Woody RD   《Journal of long-term effects of medical implants》    2003年13卷6期      共17页
    摘要 : The purpose of this review is to describe commonly used dental implants with reference to their material composition, design factors, and surface topographies. The review includes a discussion of the biological principle of osseoi... 展开

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