摘要 :
A radiation sensor compatible with CMOS technology is presented. It provides a binary output which changes its state when the total radiation dose exceeds a prefixed threshold. This circuit is intended to be used as a built-in sen...
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A radiation sensor compatible with CMOS technology is presented. It provides a binary output which changes its state when the total radiation dose exceeds a prefixed threshold. This circuit is intended to be used as a built-in sensor in standard circuits, to prevent malfunction due to radiation hazards. After measuring the radiation effects on MOS devices, the sensitivity of different sensor designs has been calculated.
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摘要 :
A computer model to evaluate radiation damage on AlGaAs-based solar cells is reported. The model is based on a piecewise approach that divides the cell structure in an adaptive number of slices. Inside a particular slice the semic...
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A computer model to evaluate radiation damage on AlGaAs-based solar cells is reported. The model is based on a piecewise approach that divides the cell structure in an adaptive number of slices. Inside a particular slice the semiconductor parameters are constant; consequently, it is easy to find an analytical solution of the semiconductor transport equations with suitable boundary conditions for the interfaces with the adjacent slices. The model provides all electrical parameters of the cells in the operating temperature range. Different structures, including graded band gaps and double heterofaces can be analyzed. Proton damage coefficients as well as proton damage ratios can be calculated for energies between 30 and 10/sup 4/ keV with only two adjustable parameters. Coirradiation experiments with different energy protons were simulated by improving the conventional method of degradation computering.
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