摘要 : Vertically aligned semiconductor nanowires (NWs) have many potential applications for NW-based technologies, ranging from solar cells to intracellular sensors. Aligned NWs can be fabricated by top-down etching of planar wafers or ... 展开
作者 | Kim~ Seokhyoung Hill~ David J. Pinion~ Christopher W. Christesen~ Joseph D. McBride~ James R. Cahoon~ James F. |
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作者单位 | |
期刊名称 | 《ACS nano》 |
总页数 | 10 |
语种/中图分类号 | 英语 / O56 |
关键词 | silicon nanowire epitaxial nanowire vapor-liquid-solid growth bottom-up lithography phosphorus doping nanowire etching |
馆藏号 | N2009EPST0000273 |