摘要 : Using four-dimensional scanning transmission electron microscopy, we demonstrate a method to visualize grains and grain boundaries in WSe2 grown by metal organic chemical vapor deposition (MOCVD) directly onto silicon dioxide. Des... 展开
作者 | Londono-Calderon~ Alejandra Dhall~ Rohan Ophus~ Colin Schneider~ Matthew Wang~ Yongqiang Dervishi~ Enkeleda Kang~ Hee Seong Lee~ Chul-Ho Yoo~ Jinkyoung Pettes~ Michael T. |
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作者单位 | |
期刊名称 | 《Nano letters》 |
总页数 | 8 |
语种/中图分类号 | 英语 / TB383 O64 |
关键词 | 4D-STEM 2D materials grain boundaries MOCVD orientation strain 2D MATERIALS MONOLAYER MOS2 BOUNDARIES TRANSPORT MONO WS2 TRANSISTORS DYNAMICS GRAPHENE NUMBER |
馆藏号 | N2007EPST0002876 |