摘要 : The two operational amplifier architectures (Op-Amps) are proposed based on depletion-mode MOS transistors and n-channel junction FET (n-JFET) modes, implemented using the modular XB06 XFAB process technology. The computer simulat... 展开 The two operational amplifier architectures (Op-Amps) are proposed based on depletion-mode MOS transistors and n-channel junction FET (n-JFET) modes, implemented using the modular XB06 XFAB process technology. The computer simulation of Op-Amps in the CAD Cadence showed that the open-loop gain of Op-Amp exceeds 65 dB, and the offset voltage's systematic component is within 10 mu V in the temperature range from -60 to + 120/140 degrees C. The Op-Amp circuits of the proposed subclass can have low static current consumption and can be performed not only on silicon MOS and JFETs, but also on the basis of wide-gap semiconductors (SiC CJFET, GaN CJFET or GaAs CJFET). The recommended area of application of the considered circuitry is analog interfaces of sensors of physical quantities for problems of high energy physics, space instrumentation and medicine. 收起