摘要 : First-principles density functional theory-based calculations have been performed to investigate the strain-induced modifications in the electronic and vibrational properties of monolayer (ML)-ZnO. A wide range of in-plane tensile... 展开
作者 | Das~ A. K. Das~ G. P. Chaudhuri~ Saumen Dev~ B. N. |
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作者单位 | |
期刊名称 | 《Journal of Electronic Materials》 |
总页数 | 11 |
语种/中图分类号 | 英语 / TB9 TN04 |
关键词 | DFT mechanical strain monolayer ZnO rippling TOTAL-ENERGY CALCULATIONS DIELECTRIC-PROPERTIES BAND-GAP GRAPHENE SINGLE SEMICONDUCTORS GROWTH FIELD MOS2 MONO |
馆藏号 | N2008EPST0006512 |