摘要 : Plasma deposited C/Ge thin films from organogermanium offer a number of advantages. Firstly, the fabrication technique is safe and simple and allows a wide variety of materials to be produced. These materials have very good therma... 展开 Plasma deposited C/Ge thin films from organogermanium offer a number of advantages. Firstly, the fabrication technique is safe and simple and allows a wide variety of materials to be produced. These materials have very good thermal stability. Following their advantages, several potential applications are foreseen. However, up to now, the only reported sound application of these materials concerns fusion targets and is connected to the atomic number of germanium. Lastly, the primary and most interesting advantage of thin Ge/C films plasma deposited from organogermanium precursor compounds is the almost unconstrained tunability of their electronic properties. 收起