摘要 : Growth at moderate temperatures, below similar to 100 degrees C, is shown to prevent interfacial silicon oxidation during atomic layer deposition of high-permittivity (high-kappa) gate dielectrics on hydrogen-terminated Si(100). T... 展开
作者 | Frank MM Wang Y Ho MT Brewer RT Moumen N Chabal YJ |
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作者单位 | |
期刊名称 | 《Journal of the Electrochemical Society》 |
总页数 | 5 |
语种/中图分类号 | 英语 / TQ15 |
关键词 | GATE DIELECTRIC LAYERS TERMINATED SILICON INFRARED-SPECTROSCOPY SI(100) SURFACES BINARY OXIDES THIN-FILMS HAFNIUM SIO2 GROWTH TRIMETHYLALUMINUM |
馆藏号 | N2008EPST0006719 |