摘要 : The increasing sub-threshold leakage current levels with newer technology nodes has been identified by ITRS as one of the major fundamental problems faced by the semiconductor industry. Concurrently, the expected performance impro... 展开
作者 | Mahadevan Gomathisankaran Akhilesh Tyagi |
---|---|
期刊名称 | 《Journal of Low Power Electronics》 |
总页数 | 13 |
语种/中图分类号 | 英语 / TN |
关键词 | Leakage Energy SRAM On-Chip Cache |
馆藏号 | N2008EPST0004032 |