[期刊]
  • 《Journal of Low Power Electronics》 2006年2卷3期

摘要 : The increasing sub-threshold leakage current levels with newer technology nodes has been identified by ITRS as one of the major fundamental problems faced by the semiconductor industry. Concurrently, the expected performance impro... 展开

作者 Mahadevan Gomathisankaran   Akhilesh Tyagi  
期刊名称 《Journal of Low Power Electronics》
总页数 13
语种/中图分类号 英语 / TN  
关键词 Leakage Energy   SRAM   On-Chip Cache  
馆藏号 N2008EPST0004032
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