摘要 : This study comprises a simulated assessment of the influence of temperature on transfer characteristics of SiGe source-based Epitaxial layer tunnel field effect transistor (SiGe source ETLTFET). Using the transfer characteristics,... 展开 This study comprises a simulated assessment of the influence of temperature on transfer characteristics of SiGe source-based Epitaxial layer tunnel field effect transistor (SiGe source ETLTFET). Using the transfer characteristics, the temperature dependence of the RF/analog parameters: transconductance (g(m)), intrinsic capacitances, cut-off frequency (f(T)), transconductance generation factor (TGF), transconductance frequency product (TFP), transit time (tau) and minimum noise figure (NFmin) are also presented. Finally, the linearity metrics including higher-order transconductance (g(m2) and g(m3)), input intercept point (IIP3), voltage intercept point (VIP3), intermodulation distortion (IMD3), and 1-dB compression point was evaluated for a wide range of temperature. The findings revealed a substantial impact of temperature on the RF/analog and linearity characteristics. As the temperature rises from 250 to 350 K, the RF/analog characteristics improved, but the linearity figure of merits deteriorates. Moreover, a degraded noise performance (NFmin increases) of the device at elevated temperature was also witnessed. 收起