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序号 标题 作者 起始页 操作
1 Defect formation during the initial stage of physical vapor transport growth of 4H-SiC in the [1120] direction Chikashi Ohshige, Tatsuya Takahashi, Noboru Ohtani... 1
2 Effect of seeding on the formation of lanthanum hexaaluminates synthesized through advanced sol gel process P. Jana, P.S. Jayan, S. Mandal... 7
3 Crystal growth, structural, optical and dielectric studies of ammonium p-toluenesulfonate G. Peramaiyan, R. Mohan Kumar, G. Bhagavannarayana 14
4 Thermal stress induced dislocation distribution in directional solidification of Si for PV application Karolin Jiptner, Bing Gao, Hirofumi Harada... 19
5 Thermodynamic evaluation of the C-Cr-Si, C-Ti-Si, and C-Fe-Si systems for rapid solution growth of SiC Taka Narumi, Sakiko Kawanishi, Takeshi Yoshikawa... 25
6 Evaluation of growth methods for the heteroepitaxy of non-polar (1120) GAN on sapphire by MOVPE F. Oehler, D. Sutherland, T. Zhu... 32
7 Integrated analysis and design optimization of germanium purification process using zone-refining technique Sen Wang, H.S. Fang, Z.L. Jin... 42
8 Influence of time-variant temperature gradients on resolidifying mushy zones Andrea Loeffler, Stephanie Lippmann, Dongmei Liu... 49
9 The effect of structural vacancies on the twins in defect zinc-blende crystal Hg_3In_2Te_6 grown by Bridgman method Lin Luo, Wanqi Jie, Yadong Xu... 54
10 Growth and characterization of CaCu_3Ti_4O_(12) single crystals Hui Eun Kim, Sang-don Yang, Jung-Woo Lee... 60