摘要 : The problem of electron tunneling in an electric field through a potential barrier doped with shallow traps has been solved. The transmission coefficient and current-voltage characteristics (CVC) of this system have been calculate... 展开 The problem of electron tunneling in an electric field through a potential barrier doped with shallow traps has been solved. The transmission coefficient and current-voltage characteristics (CVC) of this system have been calculated for different sets of-system parameters. It is shown that the current-voltage characteristics of the given system have a region with negative differential resistance, that depends on the depth of the impurity level. [References: 8] 收起