摘要 : P-type nanostructured photodetectors and phototransistors have been widely used in the field of photodetection due to their excellent electrical and optoelectronic characteristics. However, the large dark current of p-type photode... 展开
作者 | Xiong~ Yan Zheng~ Dingshan Yang~ Wenxing Chen~ Ruoling Li~ Long Jiang~ Long Yu~ Xiangxiang Zhu~ Desheng |
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作者单位 | |
期刊名称 | 《Nanotechnology》 |
总页数 | 9 |
语种/中图分类号 | 英语 / TB383 |
关键词 | SnS nanowires chemical vapor deposition low-noise high-detectivity photodetector FIELD-EFFECT TRANSISTORS SPECTRAL RESPONSE HETEROJUNCTION NANORIBBONS ULTRAVIOLET NM |
馆藏号 | N2008EPST0006735 |