摘要: As the dimensions of middle-of-line (MOL) contacts shrink, the tungsten (W) gap-filling capability becomes more critical to eliminate function failure in SRAM and logic circuit caused by W-voids. The formation of W-voids is genera... 展开
作者 | Lin Gao Yanyan Zhang Yu Bao Bin Zhong Yingming Liu Kang Ye Gang Shi Haifeng Zhou Jingxun Fang | ||
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作者单位 | |||
文集名称 | 2017 China Semiconductor Technology International Conference | ||
出版年 | 2017 | ||
出版社 | Institute of Electrical and Electronics Engineers | ||
会议名称 | China Semiconductor Technology International Conference | ||
开始页/总页数 | 1 / 3 | ||
会议日期/会议地点 | 20170312-13 / Shanghai | 会议年 | 2017 |
中图分类号 | TN304 | ||
关键词 | Biographies | ||
馆藏号 | N2017083000129018 |