摘要: Photoelectric emission induced by a focused UV laser beam (wavelength = 257 nm) has been used to probe semiconductor surfaces. It was possible to distinguish between regions of different doping levels on a silicon surface. The spa... 展开
| 作者 | Quiniou, B. Scarmozzino, R. Wu, Z. Osgood, R. M. | ||
|---|---|---|---|
| 原报告号 | ADA230536 | 总页数 | 5 |
| 主办者 | Air Force Non Paid Reprints | ||
| 报告分类号 | [46D - Solid State Physics, 49H - Semiconductor Devices] | ||
| 报告类别/文献类型 | AD / NTIS科技报告 | ||
| 关键词 | Photoelectric emission Semiconductors Doping Focusing Laser beams Laser spots Lasers Level(Quantity) Microscopy Probes Regions Resolution Scanning Silicon Spatial distribution Surfaces Ultraviolet lasers Reprints Near ultraviolet radiation | ||
