摘要: Gallium arsenide optically-triggered thyristors that exhibit tolerance to high x-ray dose rates have been fabricated. These two-terminal epitaxial devices feature breakover voltages of 18 V to 38 V with no radiation. They trigger ... 展开 Gallium arsenide optically-triggered thyristors that exhibit tolerance to high x-ray dose rates have been fabricated. These two-terminal epitaxial devices feature breakover voltages of 18 V to 38 V with no radiation. They trigger at less than 2 volts with only tenths of mW of laser light, but do not trigger at 2 x 10(sup 9)Rad(Si)/s with a bias level as much as 40 to 60 percent of the zero-radiation breakover voltage. When these devices are bombarded with neutrons, the reduced carrier lifetimes results in a decreased sensitivity to triggering by light and ionizing radiation. 收起