摘要: Angled chlorine ion beam assisted etching has been used in combination with masked ion beam lithography to produce columns in Galium Arsenide with widths of less than 10 nm and height-to-with ratios greater than 25. This technique... 展开 Angled chlorine ion beam assisted etching has been used in combination with masked ion beam lithography to produce columns in Galium Arsenide with widths of less than 10 nm and height-to-with ratios greater than 25. This technique allows the highly controllable fabrication of structures with dimensions smaller than initially defined by the lithography. It can be applied to the fabrication of ultrasmall GaAs/AlGaAs quantum well structures having quantized energy states in two or three dimensions while at the same time being compatible with full-wafer processing. In this letter we report the use of masked ion beam lithography (MIBL) and angled chlorine ion beam assisted etching (chlorine IBAE) to produce structures in GaAs with dimensions less than 10 nm. MIBL technology has been demonstrated to have larger processing latitude, more precise linewidth control, higher resolution (40 nm) with shorter exposure times (10 s) than x ray lithography, electron beam lithography, or direct write ion implantation. The chlorine IBAE technology has been shown to produce minimal surface damage and is expected to provide high-quality structures. The technique therefore allows the fabrication of structures with dimensions smaller than initially defined by the lithography. 收起