摘要: We demonstrate the fabrication and operation of an AlGaAs surface-emittingsemiconductor laser, grown by molecular-beam epitaxy, that incorporates a circularly symmetric grating of period A = 0.25 micron fabricated using electron-b... 展开 We demonstrate the fabrication and operation of an AlGaAs surface-emittingsemiconductor laser, grown by molecular-beam epitaxy, that incorporates a circularly symmetric grating of period A = 0.25 micron fabricated using electron-beam lithography. Azimuthal variations in the grating linewidth have a significant impact on the spatial modes of the laser. Surface-emitting lasers; Circular semiconductor lasers; Semiconductor lasers. 收起