摘要 : This paper presents high performance hydrogen-terminated diamond MOSFETs fabricated on a (111)-oriented single-crystal diamond substrate. The diamond surface was passivated by a high-quality Al2O3 grown by ALD at 350°C as well as ... 展开
作者 | Bing Qiao Pengfei Dai Xinxin Yu Zhonghui Li Ran Tao Jianjun Zhou Rui Shen Tangsheng Chen |
---|---|
作者单位 | |
页码/总页数 | 51-55 / 5 |
语种/中图分类号 | 英语 / TN |
关键词 | Diamonds Two dimensional hole gas Logic gates MOSFET Power generation Surface treatment Current density |
DOI | 10.1109/JEDS.2023.3347049 |
馆藏号 | IELEP0399 |