摘要 : Lack of transparent contacts has been a critical bottleneck for the two-dimensional Transition Metal Dichalcogenides (TMDs) Field Effect Transistors (FETs). In the absence of approaches to introduce physical doping without inducin... 展开
作者 | Kuruva Hemanjaneyulu Jeevesh Kumar Utpreksh Patbhaje Mayank Shrivastava |
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作者单位 | |
页码/总页数 | 46-50 / 5 |
语种/中图分类号 | 英语 / TN |
关键词 | Doping Field effect transistors Contact resistance Nickel Metals Threshold voltage Logic gates |
DOI | 10.1109/JEDS.2023.3345020 |
馆藏号 | IELEP0399 |