摘要 : Power-up states of static random-access memory (SRAM) memories are often used for generating physical unclonable functions (PUFs) in a variety of integrated circuits. The integrity of PUFs derived from commercial SRAM memories in ... 展开
作者 | Umeshwarnath Surendranathan Horace Wilson Maryla Wasiolek Khalid Hattar Aleksandar Milenkovic Biswajit Ray |
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作者单位 | |
页码/总页数 | 641-647 / 7 |
语种/中图分类号 | 英语 / TN |
关键词 | Radiation effects SRAM chips SRAM cells Authentication Arrays Transistors Inverters |
DOI | 10.1109/TNS.2023.3236625 |
馆藏号 | IELEP0182 |