摘要 : In this paper, a new structure using dual junctions in the source and drain regions is proposed to improve the electronic characteristics of the doping less carbon nanotube FET. To simulate the proposed structure, the Poisson–Schr... 展开 In this paper, a new structure using dual junctions in the source and drain regions is proposed to improve the electronic characteristics of the doping less carbon nanotube FET. To simulate the proposed structure, the Poisson–Schrodinger equation self-consistent solution method through the nonequilibrium Green’s function (NEGF) procedure has been used. The proposed structure is formed by dividing the source and drain regions into two parts with the same lengths and different work function for each part. The simulation results show that the short channel effects (SCEs) including the sub-threshold swing (SS) and the drain-induced barrier lowering (DIBL) are improved. Also, OFF current has a significant reduction, which in turn increases the current ratio. Besides, improving the ambipolar behavior and leakage current are other benefits of the proposed structure. 收起