摘要 : In this work, a novel trench-gated CAVET featuring a p-GaN island for breakdown voltage improvement is proposed. The p-GaN island inserted between the two p-GaN current-blocking-layer (CBL) constructs a dual-current-aperture verti... 展开
作者 | Bai~ Pengxiang Zhou~ Qi Huang~ Peng Chen~ Kuangli Zhu~ Liyang Wang~ Shouyi Gao~ Wei Zhou~ Chunhua Zhang~ Bo |
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作者单位 | |
期刊名称 | 《IEEE Transactions on Electron Devices》 |
页码/总页数 | 1219-1225 / 7 |
语种/中图分类号 | 英语 / TN |
关键词 | Logic gates Gallium nitride Apertures MODFETs HEMTs Transistors Doping Avalanche breakdown channel modulation dual-current-aperture electric-field distribution gallium nitride (GaN) over recess p-GaN island trench gate vertical device |
DOI | 10.1109/TED.2022.3146110 |
馆藏号 | IELEP0099 |