摘要 : This work substantiates the impact of Gaussian doping on the electrical performance of double gate junctionless field-effect transistor (DG-JLFET). To get a better understanding of the influence of non-uniform doping, the device i... 展开
作者 | Spandita Panigrahi Prasanna Kumar Sahu Annada Shankar Lenka |
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作者单位 | |
期刊名称 | 《Micro & nano letters》 |
页码/总页数 | 72-77 / 6 |
语种 | 英语 |
关键词 | field effect transistor circuits semiconductor doping SRAM chips |
DOI | 10.1049/mnl.2019.0375 |
馆藏号 | IELEP0063 |