摘要 : This brief presents a technique to evaluate the timing variation of static random access memory (SRAM). Specifically, a method called loop flattening, which reduces the evaluation of the timing statistics in the complex highly str... 展开
作者 | Qazi M. Tikekar M. Dolecek L. Shah D. |
---|---|
作者单位 | |
期刊名称 | 《IEEE transactions on very large scale integration (VLSI) systems 》 |
页码/总页数 | 1558-1562 / 5 |
语种/中图分类号 | 英语 / TN4 |
关键词 | CMOS memory Cache memories process variation random access memory sense amplifier static random access memory (SRAM) |
DOI | 10.1109/TVLSI.2012.2212254 |
馆藏号 | IELEP0273 |