摘要 : A charge-based compact capacitance model has been developed describing the capacitance–voltage characteristics of undoped or lightly doped ultra-scaled triple-gate fin field-effect transistors. Based on a unified expression for th... 展开
作者 | Fasarakis~ N. Tsormpatzoglou~ A. Tassis~ D. H. Pappas~ I. Papathanasiou~ K. Bucher~ M. Ghibaudo~ G. Dimitriadis~ C. A. |
---|---|
作者单位 | |
期刊名称 | 《Electron Devices, IEEE Transactions on》 |
页码/总页数 | p.3306-3312 / 7 |
语种/中图分类号 | 英语 / TN |
关键词 | Capacitance modeling nanoscale triple-gate (TG) FinFETs |
DOI | 10.1109/TED.2012.2223471 |
馆藏号 | IELEP0099 |