摘要 : We have successfully demonstrated a misalignment-tolerant SRAM cell, whose layout has been created from consideration of narrow-transistor failure through physical and electrical analyses. To evaluate an advantage of the layout, w... 展开 We have successfully demonstrated a misalignment-tolerant SRAM cell, whose layout has been created from consideration of narrow-transistor failure through physical and electrical analyses. To evaluate an advantage of the layout, we have performed an intentionally misaligned experiment using a test structure with each SRAM block featuring a neighbor alignment-inspection mark. Moreover, utilizing the result of the experiment, we have created a manufacturing-friendly methodology of misalignment-limit determination. 收起