摘要 : We describe a novel on-wafer resistive noise source (ORNS) suitable for noise parameter characterization of microwave devices using the cold noise power measurement technique. The noise source can enhance measurement accuracy by p... 展开 We describe a novel on-wafer resistive noise source (ORNS) suitable for noise parameter characterization of microwave devices using the cold noise power measurement technique. The noise source can enhance measurement accuracy by providing a calibrated noise temperature directly at the device reference plane. A procedure to determine the excess noise ratio of the noise source is presented. Noise figure measurements performed up to 40 GHz with the on-wafer noise source and with a commercial coaxial noise source are in good agreement, thereby validating the technique. The novel source is effective as a noise standard up to millimeter-wave frequencies. 收起