摘要 : Fully scalable, analytical HF noise parameter equations for bipolar transistors are presented and experimentally tested on high-speed Si and SiGe technologies. A technique for extracting the complete set of transistor noise parame... 展开
作者 | Voinigescu~ S.P. Maliepaard~ M.C. |
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期刊名称 | 《IEEE Journal of Solid-State Circuits》 |
页码/总页数 | P.1430-1439 / 10 |
语种/中图分类号 | 英语 / TN40 TN7 |
关键词 | Bipolar transistors Semiconductor device noise Circuit noise Equations Noise figure Noise measurement Low-noise amplifiers Integrated circuit noise Background noise Silicon germanium |
DOI | 10.1109/4.628757 |
馆藏号 | IELEP0242 |