摘要 : An original design methodology that permits implementing latch-up-free smart power circuits on a very simple, cost-effective technology is presented. The basic concept used for this purpose is letting float the wells of the MOS tr... 展开
作者 | Bafleur~ M. Buxo~ J. |
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期刊名称 | 《IEEE Transactions on Electron Devices》 |
页码/总页数 | P.1340-1342 / 3 |
语种/中图分类号 | 英语 / TM10 TN |
关键词 | Switches Tellurium Voltage CMOS technology CMOS logic circuits Switching circuits Leakage current Diodes MOSFETs Automotive applications |
DOI | 10.1109/16.216442 |
馆藏号 | IELEP0099 |