摘要 : Waveguide losses in SOI (silicon-on-insulator) material fabricated by different techniques are compared thus enabling one to confirm the theoretical dependence of losses on layer thickness. Single-mode waveguide losses in BE-SOI (... 展开 Waveguide losses in SOI (silicon-on-insulator) material fabricated by different techniques are compared thus enabling one to confirm the theoretical dependence of losses on layer thickness. Single-mode waveguide losses in BE-SOI (bond and etchback-SOI) below 0.5dB/cm are reported for waveguides with cross-sections of several square micrometres. 收起