摘要 : Quantitative risk assessments are presented for two radiation-hardened MOSFETs (Harris FSL11A0 and FRL11A0) using an extracted expression, integral flux curves representing different conditions, and experimentally-determined signa... 展开
作者 | Titus~ J.L. Wheatley~ C.F. |
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期刊名称 | 《IEEE Transactions on Nuclear Science》 |
页码/总页数 | P.1640-1651 / 12 |
语种/中图分类号 | 英语 / TL |
关键词 | Risk management MOSFETs Senior members NASA Space vehicles Protons Single event upset Associate members Cranes Rectifiers |
DOI | 10.1109/23.819133 |
馆藏号 | IELEP0182 |