摘要 : The bonding configuration and structural evolution of Si and Ge incorporated amorphous carbon (a-C:Si_x and a-C:Ge_x) films were studied. The incorporation of Si and Ge to amorphous carbon (a-C) has the advantageous effect of prom... 展开
作者 | Hae-Suk Jung Hyung-Ho Park Sang-Bae Jung Hong Koo Baik |
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作者单位 | |
期刊名称 | 《Thin Solid Films》 |
页码/总页数 | p.77-81 / 5 |
语种/中图分类号 | 英语 / TB3 |
关键词 | amorphous carbon sp~3 hybridization si incorporation ge incorporation |
馆藏号 | TB-183 |