摘要 : Double gate fully depleted silicon-on-insulator (DG SOI) is recognized as a possible solution when physical length reduces to nano-scale. In this paper, a new model is presented for DG SOI and single gate SOI (SG SOI) DC, RF and n... 展开
作者 | A. Lazaro B. Iniguez |
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作者单位 | |
期刊名称 | 《Solid-State Electronics》 |
页码/总页数 | p.826-842 / 17 |
语种/中图分类号 | 英语 / TN30 |
关键词 | compact noise modeling SOI MOSFETs double-gate MOSFETs high-frequency operation |
馆藏号 | TN-149 |