摘要 :
A body of semiconductor material having a first surface and a second surface spaced from the first surface includes a first layer along the first surface, a second layer along the second surface, a third layer between and contiguo...
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A body of semiconductor material having a first surface and a second surface spaced from the first surface includes a first layer along the first surface, a second layer along the second surface, a third layer between and contiguous to the first and second layers. The third layer is of a conductivity type opposite that of the first and second layers so as to form first and second P-N junctions respectively therebetween. The thickness of the third layer is at least twice the minority carrier diffusion length of the semiconductor material, so that carriers generated within the third layer have a high probability of being collected by one of the P-N junctions. The body includes means for electrically connecting the first and second P-N junctions and means for transferring the carriers collected at the first P-N junction to a portion of the first surface.
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摘要 :
A laser comprises a semiconductor body having a pair of end faces and including an active region comprising adjacent active and guide layers which is spaced a distance from the end face and a passive region comprising adjacent non...
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A laser comprises a semiconductor body having a pair of end faces and including an active region comprising adjacent active and guide layers which is spaced a distance from the end face and a passive region comprising adjacent non-absorbing guide and mode control layers which extends between the active region and the end face. The combination of the guide and mode control layers provides a weak positive index waveguide in the lateral direction thereby providing lateral mode control in the passive region between the active region and the end face.
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摘要 :
A method for the fabrication of active semiconductor and high-temperature superconducting device of the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insula...
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A method for the fabrication of active semiconductor and high-temperature superconducting device of the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates.
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摘要 :
A method for the fabrication of active semiconductor and high-temperature perconducting devices on the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulat...
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A method for the fabrication of active semiconductor and high-temperature perconducting devices on the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates.
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摘要 :
A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) ...
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A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.
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摘要 :
Planar submillimeter circuits are slowly replacing whisker-contacted devices at frequencies above 100 GHz, but in many cases the size constraints brought on by the short wavelengths associated with high frequency operation have n...
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Planar submillimeter circuits are slowly replacing whisker-contacted devices at frequencies above 100 GHz, but in many cases the size constraints brought on by the short wavelengths associated with high frequency operation have not been adequeately addressed. Also, reproducibility becomes more important as we make the transition from tunable, whisker-based circuits to more monolithic designs. We are continuing to develop new circuites with more reproducible characteristics.
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