摘要 :
This program focuses on Field-Hardness ; specifically, the parasitic N-channel leakages which can result on the edge of an N-Channel transistor from source to drain, from drain of one device to the drain of another or from drain (...
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This program focuses on Field-Hardness ; specifically, the parasitic N-channel leakages which can result on the edge of an N-Channel transistor from source to drain, from drain of one device to the drain of another or from drain (across the CMOS P-well) to the N-substrate (Vdd). This type of leakage normally causes device failure well before the more publicized gage-oxide problem cause Vt to drift out of spec. By butting a poly field-plate directly next to the device in the width direction (for example) we dramatically minimize the positive charge which can build up during irradiation since there is a minimal amount of oxide under this field plate; this technique is used to extend previously used concepts of using buried P+ guard-rings and special gate/field overlap layout to improve the Radiation Hardness of Integrated Circuits and has the added bonus of obviously not being sensitive to Carrier Freeze-out phenomena which degrades P+ guard-ring usefulness at a cryogenic temperatures.
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We report development of a Radiation Hard Sensor for Surveillance. The sensor is being developed by Applied Research Corporation, under an SBIR program. The sensor is based on a Superheated Superconducting Colloid Detector (SSCD)....
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We report development of a Radiation Hard Sensor for Surveillance. The sensor is being developed by Applied Research Corporation, under an SBIR program. The sensor is based on a Superheated Superconducting Colloid Detector (SSCD). Detection of X-rays, gamma-rays and neutrons is monitored by superconducting quantum interference devices (SQUID). Considerable progress has been made in demonstrating that high spatial resolution is possible, and especially that these superconducting detectors are not sensitive to radiation damage up to 35 MRads. We have constructed high quality low noise amplifiers in order to take advantage of the SQUID sensitivity. Multichannel readout capability is presently being built.
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The sixth set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications in December issues of IEEE - Nuclear Science Transactions for 1985, 1987, 1989, 1991, and the IEEE Workshop Reco...
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The sixth set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications in December issues of IEEE - Nuclear Science Transactions for 1985, 1987, 1989, 1991, and the IEEE Workshop Record, 1993. Trends in SEE susceptibility (including soft errors and latchup) for state-of- are evaluated.
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In this review the radiation hardness of various potential very large scale (VLSI) IC technologies is evaluated. IC scaling produces several countervailing trends. Reducing vertical dimensions tends to increase total dose hardness...
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In this review the radiation hardness of various potential very large scale (VLSI) IC technologies is evaluated. IC scaling produces several countervailing trends. Reducing vertical dimensions tends to increase total dose hardness, while reducing lateral feature sizes may increase susceptibility to transient radiation effects. It is concluded that during the next decade at least, silicon complimentary MOS (CMOS), perhaps on an insulating substrate (SOI) will be the technology of choice for VLSI in defense systems. (ERA citation 10:021594)
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This report summarizes the design effort on a photo detector assembly intended for use with a 6328-A optical input from a laser ggw system. The photodetector assembly shall consist of two chips: (1) photodiode chip; and (2) preamp...
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This report summarizes the design effort on a photo detector assembly intended for use with a 6328-A optical input from a laser ggw system. The photodetector assembly shall consist of two chips: (1) photodiode chip; and (2) preamplifier chip. The technology to be employed for fabrication of the chips is the D.I. linear technology. (Author)
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This report presents results of a study of radiation effects on electronic materials and devices. Emphasis is placed on determining the basic mechanisms of the interaction of radiation with these materials and components with a vi...
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This report presents results of a study of radiation effects on electronic materials and devices. Emphasis is placed on determining the basic mechanisms of the interaction of radiation with these materials and components with a view toward gaining understanding of benefit to developers of radiation-tolerant devices and circuits. Thermally stimulated current measurements have been performed on irradiated Si02 films in order to obtain basic mechanisms information regarding the nature of hole traps at the Si02-Si interface. The same activation energies approx. 0.85 and approx. 1.3 eV) were observed in both soft and hard oxides. Hard oxides simply have fewer hole traps then their soft counterparts. The effects of sodium contamination were also examined. Time-resolved charge collection measurements have been performed on GaAs devices bombarded with single 5.0-MeV alpha particles. Preliminary data indicate that charge funneling does occur in GaAs. Results of an experimental and analytical study of the effects of 14-MeV neutrons on silicon are presented. Keywords included: Radiation Effects, Radiation Hardening, Hard Errors, Soft Errors, Single Event Phenomena, and Neutron Damage.
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