摘要 :
Advanced Technology Materials, Inc. (ATMI) has developed a novel process based on green chemistry and green engineering methodologies for reclaiming valuable materials from waste electronics. We have demonstrated that we can reco...
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Advanced Technology Materials, Inc. (ATMI) has developed a novel process based on green chemistry and green engineering methodologies for reclaiming valuable materials from waste electronics. We have demonstrated that we can recover metals and valuable components from endof- life products using cost-effective, sustainable, and scalable methods (e.g., systems that are closed-loop, energy efficient and environmentally benign). This includes both chemical desoldering and precious metal reclaim from printed wiring boards (PWBs) and integrated circuits (ICs) near room temperature with all metals recovered and resold. Our current system is processing approximately 400 lbs. per hour of high value printed wiring boards.
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摘要 :
Advanced Technology Materials, Inc. (ATMI) has developed a novel process based on green chemistry and green engineering methodologies for reclaiming valuable materials from waste electronics. We have demonstrated that we can reco...
展开
Advanced Technology Materials, Inc. (ATMI) has developed a novel process based on green chemistry and green engineering methodologies for reclaiming valuable materials from waste electronics. We have demonstrated that we can recover metals and valuable components from endof- life products using cost-effective, sustainable, and scalable methods (e.g., systems that are closed-loop, energy efficient and environmentally benign). This includes both chemical desoldering and precious metal reclaim from printed wiring boards (PWBs) and integrated circuits (ICs) near room temperature with all metals recovered and resold. Our current system is processing approximately 400 lbs. per hour of high value printed wiring boards.
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摘要 :
Chemical Mechanical Planarization (CMP) become a mainstream process in semiconductor industry, it is a key technology to generate flat and smooth surface at several critical steps in the manufacturing processes. The planarization ...
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Chemical Mechanical Planarization (CMP) become a mainstream process in semiconductor industry, it is a key technology to generate flat and smooth surface at several critical steps in the manufacturing processes. The planarization performance is influenced by topography characteristics, line/space width, pattern density, slurry chemistry, rotation speed, PAD type, force/pressure, etc. However, as device continuous shrink, CMP process becomes more challengeable to achieve planarization. There exist two common issues that often occur at different pattern densities and line widths are dishing and erosion, as shown in Fig. 1. In STI CMP, dishing is defined as the oxide loss relative to the level of the neighboring nitride space, and erosion refers to the nitride loss relative to the nitride level of the neighboring area. Wide trenches or open structures usually enhance the dishing issue, while dense trenches lead to more erosion. Nitride erosion exposes the underlying active devices will lead to device failure; on the other hand, oxide dishing results in poor isolation.
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摘要 :
Chemical Mechanical Planarization (CMP) become a mainstream process in semiconductor industry, it is a key technology to generate flat and smooth surface at several critical steps in the manufacturing processes. The planarization ...
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Chemical Mechanical Planarization (CMP) become a mainstream process in semiconductor industry, it is a key technology to generate flat and smooth surface at several critical steps in the manufacturing processes. The planarization performance is influenced by topography characteristics, line/space width, pattern density, slurry chemistry, rotation speed, PAD type, force/pressure, etc. However, as device continuous shrink, CMP process becomes more challengeable to achieve planarization. There exist two common issues that often occur at different pattern densities and line widths are dishing and erosion, as shown in Fig. 1. In STI CMP, dishing is defined as the oxide loss relative to the level of the neighboring nitride space, and erosion refers to the nitride loss relative to the nitride level of the neighboring area. Wide trenches or open structures usually enhance the dishing issue, while dense trenches lead to more erosion. Nitride erosion exposes the underlying active devices will lead to device failure; on the other hand, oxide dishing results in poor isolation.
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