摘要 :
In this paper a novel new methodology is presented for mitigating the effects of one class of sensor-imperfections. Namely, it is shown how one can design a simple, inexpensive, physically realizable compensator/filter (signal pro...
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In this paper a novel new methodology is presented for mitigating the effects of one class of sensor-imperfections. Namely, it is shown how one can design a simple, inexpensive, physically realizable compensator/filter (signal processing algorithm) that, when installed in series with the sensor output signal, can effectively remove, in real-time, the corrupting effects of "inertia," "phase-lag/ "ringing," "overshoot" and similar dynamic-type sensor imperfections as they appear in a sensor output signal. This form of compensation can effectively eliminate the overall system performance-compromises such sensor imperfections would otherwise introduce.
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In this paper a method for dimensioning of inductive spring sensors is shown. This is done using an example of seat occupancy detection sensor of the automotive industry. It is in this case deals with the calculation of the indivi...
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In this paper a method for dimensioning of inductive spring sensors is shown. This is done using an example of seat occupancy detection sensor of the automotive industry. It is in this case deals with the calculation of the individual components of the spring sensor. Thereby the crucial part for this is the calculation of the inductance of the spring sensor, because the components of the signal processing must be designed for them. Furthermore, it is shown how the example of the seat occupancy detection sensor, the analogue measurement signal is generated and can be calculated. The results of the development of the seat occupancy detection sensor are presented. This method can be used to design any other inductive spring sensors. This offers the advantage that a cost-effective development of spring sensors is possible, because they can be dimensioned theoretical first.
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Two novel sensor technologies have been developed for the measurement of skin surface temperature and RF field strength in an RF environment. Such a sensor system would be particularly useful in the test and evaluation of directed...
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Two novel sensor technologies have been developed for the measurement of skin surface temperature and RF field strength in an RF environment. Such a sensor system would be particularly useful in the test and evaluation of directed energy systems. The sensors operate without being affected by the presence of RF fields and with minimal perturbation of the fields, therefore having a minimal effect on a test. The sensors are designed to be wearable and interface with a portable, battery powered electronics pack by optical fibers. The temperature sensor is based on the variation in fluorescence intensity of a sensor layer with temperature. The RF field sensors operate using a passive circuit that converts the RF field into an optical signal that is measured remotely. Both sensors have been demonstrated in high power microwave lab tests. RF sensor operability has been demonstrated for fields in the range of 0.4 - 8.9 W/cm~2, while the temperature sensor has been demonstrated over the 30 — 60°C temperature range.
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摘要 :
Two novel sensor technologies have been developed for the measurement of skin surface temperature and RF field strength in an RF environment. Such a sensor system would be particularly useful in the test and evaluation of directed...
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Two novel sensor technologies have been developed for the measurement of skin surface temperature and RF field strength in an RF environment. Such a sensor system would be particularly useful in the test and evaluation of directed energy systems. The sensors operate without being affected by the presence of RF fields and with minimal perturbation of the fields, therefore having a minimal effect on a test. The sensors are designed to be wearable and interface with a portable, battery powered electronics pack by optical fibers. The temperature sensor is based on the variation in fluorescence intensity of a sensor layer with temperature. The RF field sensors operate using a passive circuit that converts the RF field into an optical signal that is measured remotely. Both sensors have been demonstrated in high power microwave lab tests. RF sensor operability has been demonstrated for fields in the range of 0.4 - 8.9 W/cm~2, while the temperature sensor has been demonstrated over the 30 - 60℃ temperature range.
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摘要 :
We demonstrate an integrated fluorescence sensor chip consisting of an InGaN-GaN light emitting diode for fluorescence excitation, a bonded silicon junction photodiode for fluorescence detection, and a thin film filter for pump re...
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We demonstrate an integrated fluorescence sensor chip consisting of an InGaN-GaN light emitting diode for fluorescence excitation, a bonded silicon junction photodiode for fluorescence detection, and a thin film filter for pump rejection and fluorescence selectivity. Evanescent field excitation at the LED surface is used to lessen the background due to stray pump light. The device is robust, and amenable to wafer-scale fabrication. Initial results with CdSe/ZnS quantum dot fluorophores yield a surface-bound sensitivity of 10 femtomoles, from which we predict a bulk fluid sensitivity of ~ 10 nanomolar for typical antibody-antigen assays.
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摘要 :
We demonstrate an integrated fluorescence sensor chip consisting of an InGaN-GaN light emitting diode for fluorescence excitation, a bonded silicon junction photodiode for fluorescence detection, and a thin film filter for pump re...
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We demonstrate an integrated fluorescence sensor chip consisting of an InGaN-GaN light emitting diode for fluorescence excitation, a bonded silicon junction photodiode for fluorescence detection, and a thin film filter for pump rejection and fluorescence selectivity. Evanescent field excitation at the LED surface is used to lessen the background due to stray pump light. The device is robust, and amenable to wafer-scale fabrication. Initial results with CdSe/ZnS quantum dot fluorophores yield a surface-bound sensitivity of 10 femtomoles, from which we predict a bulk fluid sensitivity of ~ 10 nanomolar for typical antibody-antigen assays.
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摘要 :
We demonstrate an integrated fluorescence sensor chip consisting of an InGaN-GaN light emitting diode for fluorescence excitation, a bonded silicon junction photodiode for fluorescence detection, and a thin film filter for pump re...
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We demonstrate an integrated fluorescence sensor chip consisting of an InGaN-GaN light emitting diode for fluorescence excitation, a bonded silicon junction photodiode for fluorescence detection, and a thin film filter for pump rejection and fluorescence selectivity. Evanescent field excitation at the LED surface is used to lessen the background due to stray pump light. The device is robust, and amenable to wafer-scale fabrication. Initial results with CdSe/ZnS quantum dot fluorophores yield a surface-bound sensitivity of 10 femtomoles, from which we predict a bulk fluid sensitivity of ~ 10 nanomolar for typical antibody-antigen assays.
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摘要 :
The analysis of the possibilities of the development of new types of temperature, pressure, and gas BAW TFR and HBAR sensors is presented. Such devices are more high-frequency, sensitive and miniature than known SAW-sensors; they ...
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The analysis of the possibilities of the development of new types of temperature, pressure, and gas BAW TFR and HBAR sensors is presented. Such devices are more high-frequency, sensitive and miniature than known SAW-sensors; they are compatible with small-size microwave aerials for wireless distance probing. A numerical analysis of the possible parameters of such devices is presented.
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摘要 :
The analysis of the possibilities of the development of new types of temperature, pressure, and gas BAW TFR and HBAR sensors is presented. Such devices are more high-frequency, sensitive and miniature than known SAW-sensors; they ...
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The analysis of the possibilities of the development of new types of temperature, pressure, and gas BAW TFR and HBAR sensors is presented. Such devices are more high-frequency, sensitive and miniature than known SAW-sensors; they are compatible with small-size microwave aerials for wireless distance probing. A numerical analysis of the possible parameters of such devices is presented.
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摘要 :
A matrix of optical fiber sensors eligible for remote measurements is reported in this paper. The aim of work was to monitor the air quality with a device, which does not need any electricity on site of the measurement. The matrix...
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A matrix of optical fiber sensors eligible for remote measurements is reported in this paper. The aim of work was to monitor the air quality with a device, which does not need any electricity on site of the measurement. The matrix consists of several sensors detecting carbon dioxide concentration, relative humidity and temperature. Sensors utilize active optical materials, which change their color when exposed to varied conditions. All the sensors are powered with standard light emitting diodes. Light is transmitted by an optical fiber from the light source and then it reaches the active layer which changes its color, when the conditions change. This results in a change of attenuation of light passing through the active layer. Modified light is then transmitted by another optical fiber to the detector, where simple photoresistor is used. It is powered by a stabilized DC power supply and the current is measured. Since no expensive elements are needed to manufacture such a matrix of sensors, its price may be competitive to the price of the devices already available on the market, while the matrix also exhibits other valuable properties.
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