摘要 :
Recently copper as metallization for contact and interconnect in VLSI is attracting attention. In this study, copper has been selectively deposited over defined areas on glass and silicon using the chemical bath deposition techniq...
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Recently copper as metallization for contact and interconnect in VLSI is attracting attention. In this study, copper has been selectively deposited over defined areas on glass and silicon using the chemical bath deposition technique. A continuous copper film with a resistivity of 1.87μΩ cm for 6000 A thickness is formed. The rate of deposition and the film resistivity are studied. The deposition process and its characteristics are discussed.
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