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The semiconducting iron disilicide β-FeSi_2 has recently attracted considerable attention due to its remarkable optical and electrical properties. In this paper, we investigate the β-FeSi_2/c-Si(p)/μc-Si(p~+) heterojunction sol...
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The semiconducting iron disilicide β-FeSi_2 has recently attracted considerable attention due to its remarkable optical and electrical properties. In this paper, we investigate the β-FeSi_2/c-Si(p)/μc-Si(p~+) heterojunction solar cells and optimize its structure by AFORS-HET software. By adjusting the emitter and back surface field (BSF) parameters, we find that increment of the emitter thickness would decrease the short current density and the conversion efficiency; the influence of the interface state could not be ignored; an optimized BSF will increase 1 point of conversion efficiency. The final optimized parameters of heterojunction solar cell are V_(_∝=600.8 mV, J_(sc)=40.81 mA/cm~2, FF=80.77% and η=19.8%.
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An a-Si:H (p) window layer is used in silicon heterojunction (SHJ) solar cells; however, it is limited by short-circuit current density (J(SC)). In general, an emitter with a high doping concentration is appropriate for contact wi...
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An a-Si:H (p) window layer is used in silicon heterojunction (SHJ) solar cells; however, it is limited by short-circuit current density (J(SC)). In general, an emitter with a high doping concentration is appropriate for contact with a transparent conducting oxide (TCO); however, it is influenced by side effects such as a reduction of J(SC) through optical absorption. The conductivity of the emitter is lowered as its doping concentration is reduced, resulting in a decrease in V-OC and FF. We investigated p-type emitters such as those made of a-Si:H, a-SiC:H, and mu c-SiO:H through film analysis and AFORS-HET simulation to improve the conversion efficiency of the device. Prior to conducting a simulation, a fabricated SHJ solar cell was used to theoretically calculate the precise parameter values. The obtained efficiency was 22.03 % when V-OC=730 mV, J(SC)=39.63 mA/cm(2), and FF = 76.13 %. Based on the fitted structure, we conducted experiments to test the emitter materials within a wide band gap and performed a simulation. In the case of mu c-SiO:H (p), the achieved efficiency was 24.23 % when V-OC=736.6 mV, J(SC)=40.15 mA/cm(2), and FF = 81.93 %.
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In this article, we present a study based on numerical simulation of the electrical characteristics of a thin-film heterojunction solar cell (a-Si(n)/a-Si(i)/c-Si(p)/a-Si(i)/a-Si(p)), using the automat for simulation of hetero-str...
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In this article, we present a study based on numerical simulation of the electrical characteristics of a thin-film heterojunction solar cell (a-Si(n)/a-Si(i)/c-Si(p)/a-Si(i)/a-Si(p)), using the automat for simulation of hetero-structures (AFORS-Het) software. This cell is composed of four main layers of silicon (Si): (i) 5 nm amorphous silicon doped n, (ii) 100 mu m crystalline silicon (substrate) doped p, (iii) 5 nm amorphous silicon doped p, and (iv) 3 nm amorphous silicon intrinsic. This cell has a front and rear metal contact of aluminum and zinc oxide (ZnO) front layer transparent conductive oxide of 80 nm thickness. The simulations were performed at conditions of "One Sun'' irradiation with air mass 1.5 (AM1.5), and under absolute temperature T = 300 K. The simulation results have shown a high electrical conversion efficiency of about 30.29% and high values of open circuit voltage V-oc = 779 mV. This study has also shown that the studied cell has good quality light absorption on a very broad spectrum.
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Using well-practiced AFORS-HET software, thin film a-Si:H Bifacial Solar Cells (BFSCs) has been investigated and simulated. The aim of this study is to simulate performances of a-Si:H BFCs with structure of Glass/TCO/(n) a-Si:H/(i...
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Using well-practiced AFORS-HET software, thin film a-Si:H Bifacial Solar Cells (BFSCs) has been investigated and simulated. The aim of this study is to simulate performances of a-Si:H BFCs with structure of Glass/TCO/(n) a-Si:H/(i) a-Si:H/(p) a-Si:H/TCO/Glass. The results show that the optimized band gap for each layers are 2.0 eV (n-type), 1.7 eV (i-type) and 2.0 eV (p-type), respectively. The final simulation show that a significant increase <i>V <i>_(OC) , <i>J <i>_(SC) , <i>FF and <i>Eff for both side of a-Si:H BFSCs. Finally, the maximum efficiency obtained are 7.79% for the front side and 5.68% for the rear side, respectively.
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The silicon heterojunction (SHJ) solar cell has been one of the most promising candidates for the photovoltaic (PV) market because of its high efficiency, simple structure and mature fabrication process. By replacing the p type an...
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The silicon heterojunction (SHJ) solar cell has been one of the most promising candidates for the photovoltaic (PV) market because of its high efficiency, simple structure and mature fabrication process. By replacing the p type and n-type doped silicon layers with metal oxides, the so-called dopant-free asymmetric heterocontacts (DASH) solar cell can be formed, which will be easy to achieve full-surface passivation and selective carrier transport. In this study, the AFORS-HET software was used to simulate the Ag grid/ITO/ZnO/c-Si(p)/MoOX/Ag device configuration, in which ZnO was used as electron-selective contact and MoOX as hole-selective contact. The influence of work function (WF) of MoOX layer, thickness and doping concentration of ZnO layer, doping concentration of crystalline silicon (c-Si) layer on the device performance were investigated. The simulation results demonstrated that the application of ZnO layer and MoOX layer as carrier-selective layers can significantly increase the open-circuit voltage (V-OC) and short-circuit current density (J(SC)). After a series of optimization, the simulated champion conversion efficiency (Eff) can reach 27.64 %, which will provide meaningful information for subsequent experiment research of DASH solar cells.
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Perovskite being a wide bandgap material has shown profound impact as an active material for the use of top cell in the tandem solar cell. However, finding a suitable low-bandgap material for the bottom cell of the perovskite asso...
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Perovskite being a wide bandgap material has shown profound impact as an active material for the use of top cell in the tandem solar cell. However, finding a suitable low-bandgap material for the bottom cell of the perovskite associated tandem solar cell has always been a concern for researchers. Over the last decade, several materials for designing of the bottom cell have been reported as a combination to perovskite for superior efficiency. In this paper, a novel perovskite/Mg_2Si based monolithic tandem solar cell is reported through numerical simulations using AFROS-HET v2.5. The reported device shows 25% efficiency prior to optimization. However, the structure of the device has been optimized to obtain better results in terms of efficiency by varying active layer thickness and using different electron/hole transport materials. About 8% improvement in efficiency has been noticed by the selection of optimum design parameters. Further, to account for the temperature reliability of the proposed design, the device is simulated for a temperature range of 300 K-450 K. This study highlights a drop-in open-circuit voltage (V_(OC)) by a factor of about 0.1 V with an increase in temperature by about 50 K. Results clearly establish that structural and temperature variations significantly affect overall device performance. Results have been suitably analyzed so as to set a roadmap for further research work in this direction and explore the best of the characteristics of this unique tandem solar cell structure.
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Highly conductive materials with wide band gaps are used as front surface field (FSF) layer to achieve a prominent efficiency in silicon heterojunction (SHJ) solar cells. In this study, we demonstrate an n-type hydrogenated microc...
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Highly conductive materials with wide band gaps are used as front surface field (FSF) layer to achieve a prominent efficiency in silicon heterojunction (SHJ) solar cells. In this study, we demonstrate an n-type hydrogenated microcrystalline silicon oxide (mu c-SiO:H) layer with high conductivity and beneficial optical properties for its application in SHJ solar cells. To develop a substitute to a-Si:H (n), we started our research in the synthesis of HIT-type solar cells with three different layers, namely, a-Si:H (n), micro-crystalline silicon (mu c-Si: H(n)), and mu c-SiO:H (n). Owing to its better surface passivation, wide optical gap, and high conductivity, the mu c-SiO:H (n) layer was employed as a substitute to a-Si:H (n). It is difficult to thoroughly investigate the effects of every parameter, such as the thickness, the electron affinity, and the doping density on the device performance experimentally. We, therefore, used a program based on the automat for simulation of heterostructures (AFORS-HET), to evaluate the limitation of the conversion efficiency, which provides a convenient way to accurately evaluate the role of various parameters. We obtained a high efficiency with open circuit voltage, (V-OC) of 755.3 mV and a fill factor (FF) of 79.82 % are essential factors owing to a favorable bending of the conduction band in the mu c-SiO:H (n) next to the a-Si:H (i). We achieved a high efficiency of 25.35 % using a mu c-SiO:H film with both an appropriate electron affinity of 4.1 eV and the doping density of 10(19) cm(-3).
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In the presented work, cell's parameter of heterostructure silicon solar cell modelled as: ITO (front contact)/n-Dn/p-cSi/Ag under the illumination of monochromatic light at standard spectrum AM-1.5 G, has been optimized by using ...
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In the presented work, cell's parameter of heterostructure silicon solar cell modelled as: ITO (front contact)/n-Dn/p-cSi/Ag under the illumination of monochromatic light at standard spectrum AM-1.5 G, has been optimized by using AFORS-HET v 2.5 software. We have used n-type diamane as an emitter layer and the nature of diamane has been considered 3D in spite of 2D as well as electronic nature of diamane is considered isotropic. To ensure that Schottky junction has been formed at interface, the electric contacts have been made along the c-axis so that maximum charge carriers get collected. To obtain the high efficiency, various parameters of n-type diamane as well as p-type c-Si layers have been optimized and the maximum efficiency of 16.84% has been obtained for single layer n-diamane at 100 μm thick silicon wafer. We also investigated the spectral response and dependency of temperature on the performance of exclusively designed solar cell and we obtained the best efficiency 16.84% at 300 K temperature. In order to check the performance on commercially available silicon we have optimized the same solar cell by considering the parameters of commercially available p-type crystalline silicon layer and maximum efficiency 10.41% was achieved. After getting the maximum efficiency 16.84% we further carried out the simulation by optimizing the layer numbers of n-diamane and found decrement in the efficiency up to 15.3% which indicates that, efficiency slightly decreases as layer number increases. We have demonstrated that n-type diamane might be used as an effective emitter layer in crystalline Si heterojunction solar cell.
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The use of multilayer p-graphene as hole transporting layer has been successfully shown to improve the performance of perovskite solar cell. The structure of p-graphene/CH_3NH_3PbI_3/n-cSi is designed and simulated in AFORS-HET so...
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The use of multilayer p-graphene as hole transporting layer has been successfully shown to improve the performance of perovskite solar cell. The structure of p-graphene/CH_3NH_3PbI_3/n-cSi is designed and simulated in AFORS-HET software. We optimized the parameters of single layer p-graphene and obtained power conversion efficiency (PCE) of 12.21% under an illumination of AM 1.5G. With an increase in the number of p-graphene layers, the PCE falls down to 10.01%. The optimization of active layer parameters increases the PCE up to 12.27%. Further optimization of n-cSi parameters lead to the highest PCE of 16.75%. A significant effect of the operating temperature on the solar cell performance is observed. The effect of textured front surface on the solar cell performance is also studied and a PCE of 17.90% is obtained for textured surface as compared to 16.75% for planar surface. Our studies indicated that p-graphene may act as an efficient hole transporting layer in perovskite solar cell.
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In this article, a structure of heterojunction solar cell configured as Ti (front contact)/p-phosphorene/n-cSi/Ag (back contact) has been simulated by using AFOSR-HET v2.5 software. Here, electronic nature of phosphorene layer whi...
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In this article, a structure of heterojunction solar cell configured as Ti (front contact)/p-phosphorene/n-cSi/Ag (back contact) has been simulated by using AFOSR-HET v2.5 software. Here, electronic nature of phosphorene layer which is anisotropic along armchair and zigzag directions has been considered as 3D in nature instead of 2D. After optimizing the parameters of p-type single layer phosphorene and n-type crystalline silicon (n-cSi) maximum power conversion efficiency 15.51% and 14.06% has been achieved for armchair and zigzag phosphorene, respectively. The temperature dependence of the cell performance has been studied and maximum efficiency has been found at 300 K for both armchair and zigzag phosphorene layer. Further, we have studied the effect of metal contact on the cell performance. We have also simulated the solar cell taking experimentally available parameters of n-cSi and efficiencies of 13.29% and 14.06% are found in cases of the armchair and zigzag phosphorene layers, respectively. Finally, we have demonstrated that multilayer p-type phosphorene layer could act as an effective transparent conducing electrode in the silicon heterojunction solar cell.
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