摘要 : The effects of postfabrication thermal annealing on the performance and stability of organic light-emitting diodes (OLEDs) were systematically investigated in standard indium tin oxide/4,4('),4(')-tris(3-methylphenylphenylamino)tr... 展开 The effects of postfabrication thermal annealing on the performance and stability of organic light-emitting diodes (OLEDs) were systematically investigated in standard indium tin oxide/4,4('),4(')-tris(3-methylphenylphenylamino)triphenylamine/N,N-'-diphenyl-N, N-'-bis(l-naphthyl-phenyl)-(1,1(')-biphenyl)-4,4(')-diamine Alq(3) devices. Electrical and optical performance, surface morphology of organic thin films, and operation stability of the devices with different thermal treatments were measured and monitored. It was found that devices that were thermally annealed at 70 degrees C exhibited the best performance. Moreover, those devices had the best thin-film morphology and the lowest degradation of electroluminescent performance. The operating stability of the heat-treated device was improved by a factor of over 1.7 times than annealed devices and a half-brightness lifetime of over 7200 h was obtained. The 70 degrees C thermally annealed devices have modified and enhanced the bonding at the interfaces of the organic layer, resulting in decreased turn-on voltage, less leakage current, higher luminescence, and longer lifetime. (c) 2007 The Electrochemical Society. 收起