摘要 : At ambient temperature, Al-1%Si wire of 25 mu m diameter was bonded successfully onto the Au/Ni/Cu pad by ultrasonic wedge bonding technology. Physical process of the bond formation and the interface joining essence were investiga... 展开 At ambient temperature, Al-1%Si wire of 25 mu m diameter was bonded successfully onto the Au/Ni/Cu pad by ultrasonic wedge bonding technology. Physical process of the bond formation and the interface joining essence were investigated. It is found that the wire was softened by ultrasonic vibration, at the same time, pressure was loaded on the wire and plastic flow was generated in the bonding wire, which promoted the diffusion for Ni into Al. Ultrasonic vibration enhanced the interdiffusion that resulted from the inner defects such as dislocations, vacancies. voids and so on, which ascribed to short circuit diffusion. (c) 2006 Elsevier B.V. All rights reserved. 收起