摘要 : Selective diamond films on roughened Si(100) substrates with patternings have been achieved by microwave plasma chemical vapor deposition (MP-CVI)). The films have been characterized by scanning electron microscopy (SEM) and Raman... 展开 Selective diamond films on roughened Si(100) substrates with patternings have been achieved by microwave plasma chemical vapor deposition (MP-CVI)). The films have been characterized by scanning electron microscopy (SEM) and Raman spectra. The influence of substrate temperature on the selective deposition of diamond films has been discussed in detail: the diamond nucleation density on the SiO_2 mask increased with substrate temperature while the effect of the selective deposition of diamond films deteriorated; the optimized deposition temperature conditions have been concluded. 收起