摘要 : The n-type and p-type a-GaN films are successfully grown by MOCVD on the r-sapphire substrate with smooth mirror surface morphology. The growth rate versus the growth temperature is investigated. Optimum doping parameters by accep... 展开
作者 | Marina Orlova Oleg Abdullaev Michail Mezhenny Alexander Chelny Alexander Savchuk Ivan Ermoshin Oleg Rabinovich Sergey Didenko Yuri Osipov Natalya Kourova Yuri Akhmerov Sergey Marenkin |
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作者单位 | |
期刊名称 | 《Physica status solidi, B. Basic solid state physics》 |
总页数 | 7 |
语种/中图分类号 | 英语 / O48 |
关键词 | doping films GaN growth heterostructures InGaN simulation |
馆藏号 | N2022052300099000 |