摘要 : The theoretical investigation of the hyper-Raman scattering by 2L0 phonons is carried when the doubled energy of incident photons lies near the band gap of a semiconductor. The scattering process is consid_ered, taking into accoun... 展开 The theoretical investigation of the hyper-Raman scattering by 2L0 phonons is carried when the doubled energy of incident photons lies near the band gap of a semiconductor. The scattering process is consid_ered, taking into account the Wannier excitons as intermediate states. 收起