摘要 : Carbon is a common substitutional impurity in Si. It traps hydrogen, and several {C,H} and {C,H,H} complexes have been observed by electrical and optical techniques. In this paper, we report (preliminary) first-principles molecula... 展开
作者 | McAfee JL. Estreicher SK. |
---|---|
期刊名称 | 《Physica, B. Condensed Matter 》 |
总页数 | 4 |
语种/中图分类号 | 英语 / O4 |
关键词 | Carbon Hydrogen Silicon Substitutional carbon Crystalline silicon Hydrogen atmosphere Absorption Impurities Systems Oxygen Modes State |
馆藏号 | N2008EPST0009950 |