[期刊]
  • 《Physica, B. Condensed Matter》 2003年340/342卷期

摘要 : Carbon is a common substitutional impurity in Si. It traps hydrogen, and several {C,H} and {C,H,H} complexes have been observed by electrical and optical techniques. In this paper, we report (preliminary) first-principles molecula... 展开

作者 McAfee JL.   Estreicher SK.  
期刊名称 《Physica, B. Condensed Matter 》
总页数 4
语种/中图分类号 英语 / O4  
关键词 Carbon   Hydrogen   Silicon   Substitutional carbon   Crystalline silicon   Hydrogen atmosphere   Absorption   Impurities   Systems   Oxygen   Modes   State  
馆藏号 N2008EPST0009950
相关作者
相关关键词