摘要 : By differential thermal analysis (DTA) is was shown that the pseudo-binary system Tb2O3-SiO2 contains intermediate compounds Tb2SiO5, Tb4Si3O12 and Tb2Si2O7. All three compounds melt congruently, a phase diagram was proposed, and ... 展开 By differential thermal analysis (DTA) is was shown that the pseudo-binary system Tb2O3-SiO2 contains intermediate compounds Tb2SiO5, Tb4Si3O12 and Tb2Si2O7. All three compounds melt congruently, a phase diagram was proposed, and from the latter compound single crystals could be grown for the first time. This was possible from stoichiometric feed rods by the optical floating-zone (OFZ) technique. X-ray powder analysis proved the Pna2(1) phase of the crystals. Melting temperature and heat of fusion were measured by DTA to be 1769 degrees C and approximate to 150 kJ/mol, respectively. The specific heat capacity of Tb2Si2O7 was measured by dynamic DSC to be c(p) = 149.4982 + 0.2242 . T - 7.3913 x 10(-5) . T-2 + 558449.3624 . T-2. 收起