摘要 : This paper presents an ultra-low power 3T gain-cell embedded DRAM (GC-eDRAM) cell in fin field-effect transistor (FinFET). This memory structure uses fast and low leakage FinFET transistors to improve frequent refresh issue and re... 展开
作者 | Sany~ Bahareh Seyedzadeh Ebrahimi~ Behzad |
---|---|
作者单位 | |
期刊名称 | 《Analog Integrated Circuits and Signal Processing》 |
总页数 | 13 |
语种/中图分类号 | 英语 / TN43 |
关键词 | Data retention time Embedded DRAM FinFET Gain-cell Ultra-low power Retention power GAIN-CELL EMBEDDED DRAM SRAM ROBUST DESIGN |
馆藏号 | N2008EPST0012013 |